Terahertz emission by diffusion of carriers and metal-mask dipole inhibition of radiation.

نویسندگان

  • M E Barnes
  • D McBryde
  • G J Daniell
  • G Whitworth
  • A L Chung
  • A H Quarterman
  • K G Wilcox
  • A Brewer
  • H E Beere
  • D A Ritchie
  • V Apostolopoulos
چکیده

Terahertz (THz) radiation can be generated by ultrafast photo-excitation of carriers in a semiconductor partly masked by a gold surface. A simulation of the effect taking into account the diffusion of carriers and the electric field shows that the total net current is approximately zero and cannot account for the THz radiation. Finite element modelling and analytic calculations indicate that the THz emission arises because the metal inhibits the radiation from part of the dipole population, thus creating an asymmetry and therefore a net current. Experimental investigations confirm the simulations and show that metal-mask dipole inhibition can be used to create THz emitters.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Theory of magnetic-field enhancement of surface-field terahertz emission

We present a theoretical treatment of surface–field THz generation in semiconductors, which explains the power enhancement observed when a magnetic field is applied. Our model consists of two parts: a Monte Carlo simulation of the dynamics of carriers generated by a subpicosecond optical pulse, and a calculation of the resulting THz radiation emitted through the semiconductor surface. The magne...

متن کامل

High-intensity terahertz radiation from a microstructured large-area photoconductor

We present a planar large-area photoconducting emitter for impulsive generation of terahertz sTHzd radiation. The device consists of an interdigitated electrode metal-semiconductor-metal sMSMd structure which is masked by a second metallization layer isolated from the MSM electrodes. The second layer blocks optical excitation in every second period of the MSM finger structure. Hence charge carr...

متن کامل

Terahertz emission from GaAs and InAs in a magnetic field

We have studied terahertz ~THz! emission from InAs and GaAs in a magnetic field, and find that the emitted radiation is produced by coupled cyclotron-plasma charge oscillations. Ultrashort pulses of THz radiation were produced at semiconductor surfaces by photoexcitation with a femtosecond Ti-sapphire laser. We recorded the integrated THz power and the THz emission spectrum as a function of mag...

متن کامل

Strong interference enhancement of terahertz emission from a photoexcited semiconductor surface.

To enhance terahertz emission from an optically excited semiconductor surface, we propose to sandwich a thin (as compared to the terahertz wavelength) semiconductor layer between a dielectric hyperhemispherical lens and metal substrate. The layer is excited through the lens. The substrate provides constructive interference of terahertz waves emitted to the lens directly from the layer and refle...

متن کامل

Terahertz emission from YBa2Cu3O7Àd thin films via bulk electric-quadrupole–magnetic-dipole optical rectification

We report the observation of terahertz emission from YBa2Cu3O72d thin films excited by 1.5-eV, 150-fs pulses in the absence of external electric or magnetic fields. This emission is characterized for optimally doped d50 films and underdoped d50.5 films, over a range of temperatures T, 4 K,T,300 K, where the films change from superconductors to correlated metals. It exhibits a pronounced 4f depe...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Optics express

دوره 20 8  شماره 

صفحات  -

تاریخ انتشار 2012